document number: 83661 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 11-jan-08 1 optocoupler, phototransistor output, no base connection moc8111/moc8112 vishay semiconductors description the moc8111/ moc8112 is an optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in dip 6 pin package. the coupling device is suitable for signal transmission between two electrically separated circuits. the potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages. in contrast to the il1, the base terminal is not connected, resulting in substantially improved common mode interference immunity. features ? no base terminal connection for improved common mode interface immunity ? long term stability ? industry standard dual in line package ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? bsi iec 60950; iec 60065 ? din en 60747-5-2 (vde 0884)/din en 60747-5-5 pending available with option 1 ? csa 93751 note for additional information on the availabl e options refer to option information. i179009 1 2 3 6 5 4 b c e a c nc order information part remarks moc8111 ctr > 20 %, dip-6 moc8112 ctr > 50 %, dip-6 moc8111-x006 ctr > 20 %, dip-6 400 mil (option 6) moc8111-x007 ctr > 20 %, smd-6 (option 7) moc8112-x006 ctr > 50 %, dip-6 400 mil (option 6) MOC8112-X007 ctr > 50 %, smd-6 (option 7) moc8112-x009 ctr > 50 %, smd-6 (option 9) absolute maximum ratings (1) parameter test condition symbol value unit input dc forward current i f 60 ma reverse voltage v r 6.0 v surge forward current t 10 s i fsm 2.5 a total power dissipation p diss 100 mw output emitter collector breakdown voltage bv eco 30 v collector current i c 50 ma t 10 s i c 150 ma total power dissipation p diss 150 mw
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83661 2 rev. 1.5, 11-jan-08 moc8111/moc8112 vishay semiconductors optocoupler, phototransistor output, no base connection notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause per manent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (2) refer to reflow profile for soldering condi tions for surface mounted devices (smd). refe r to wave profile for soldering conditi ons for through hole devices (dip). note t amb = 25 c, unless otherwise specified. minimum and maximum values are testing requi rements. typical values ar e characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. coupler isolation test voltage between emitter and detector refer to standard climate 23/50 din 50014 v iso 5300 v rms creepage distance 7mm clearance distance 7mm isolation thickness between emitter and detector 4mm comparative tracking index per din iec 112/vde 0303, part 1 cti 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 100 c soldering temperature (2) max. 10 s, dip soldering distance to seating plane 1.5 mm t sld 260 c absolute maximum ratings (1) parameter test condition symbol value unit electrical characteristics parameter test condition symbol min. typ. max. unit input forward voltage i f = 10 ma v f 1.15 1.5 v reverse leakage current v r = 6.0 v i r 0.05 10 a junction capacitance v = 0 v, f = 1.0 mhz c j 25 pf output collector emitter breakdown voltage i c = 1.0 a bv ceo 30 v collector emitter leakage current v ce = 10 v i ceo 1.0 50 na emitter collector breakdown voltage i e = 10 a bv eco 7.0 v collector emitter capacitance v ce = 0 v, f = 1.0 mhz c ce 7.0 pf coupler collector saturation voltage i c = 500 a, i f = 10 ma v cesat 0.15 0.4 v current transfer ratio parameter test condition part symbol min. typ. max. unit current transfer ratio i f = 10 ma, v ce = 10 v moc8111 ctr 20 % moc8112 ctr 50 % switching characteristics parameter test condition symbol min. typ. max. unit turn-on time v cc = 10 v, r l = 100 i c = 2.0 ma, see figure 1 t on 7.5 20 s turn-off time v cc = 10 v, r l = 100 i c = 2.0 ma, see figure 1 t off 5.7 20 s
document number: 83661 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 11-jan-08 3 moc8111/moc8112 optocoupler, phototransistor output, no base connection vishay semiconductors fig. 1 - switching times package dimensions in inches (millimeters) imoc 8 111_01 test circ u it 10 % 90 % inp u tp u lse o u tp u tp u lse t on t off t r t f w a v eforms v cc v o u t = 10 v i c r l =100 inp u t inp u tc u rrent adj u sted to achie v e i c = 2ma i17 8 004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3. 8 1) 0.031 (0. 8 0) min. 0.300 (7.62) typ. 0.031 (0. 8 0) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.01 8 (0.45) 0.022 (0.55) 0.04 8 0.022 (0.55) 0.24 8 (6.30) 0.256 (6.50) 0.335 ( 8 .50) 0.343 ( 8 .70) pin one id 6 5 4 1 2 3 1 8 3 to 9 0.300 to 0.347 (7.62 to 8 . 8 1) 4 typ. iso method a (0.45) min. 0.315 ( 8 .00) 0.020 (0.51 ) 0.040 (1.02 ) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03 ) 0.012 (0.30 ) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7. 8 ) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) option 6 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0 (4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) min. option 7 1 8 450
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83661 4 rev. 1.5, 11-jan-08 moc8111/moc8112 vishay semiconductors optocoupler, phototransistor output, no base connection ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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